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Heterostructures for High Performance Devices

dc.contributor.authorFonstad, Clifton G., Jr.en_US
dc.contributor.authorVlcek, James C.en_US
dc.contributor.authorPhillips, Mary R.en_US
dc.contributor.authorHaus, Hermann A.en_US
dc.contributor.authorChoi, Woo-Youngen_US
dc.contributor.authorRoyter, Yakowen_US
dc.contributor.authorHoshiro, Isakoen_US
dc.contributor.authorSinger, Richarden_US
dc.contributor.authorBrorson, Stuart D.en_US
dc.contributor.authorSmith, Darylen_US
dc.contributor.authorLaurich, B.en_US
dc.contributor.authorMailhoit, Christianen_US
dc.contributor.authorMcCombe, Bruce D.en_US
dc.contributor.authorWeinstein, Bernie A.en_US
dc.contributor.authorTowe, Elias D.en_US
dc.contributor.authorLe, H. Q.en_US
dc.contributor.authorHryniewicz, J. V.en_US
dc.contributor.authorBroekaert, Thomas P. E.en_US
dc.contributor.authorPeng, Lung-Hanen_US
dc.contributor.authorBurns, Geoffrey F.en_US
dc.contributor.authorBlanck, Herveen_US
dc.contributor.authorThompson, Carl V.en_US
dc.contributor.authorCeyer, Sylvia T.en_US
dc.contributor.authorSawin, Herbert H.en_US
dc.date.accessioned2010-07-16T04:12:54Z
dc.date.available2010-07-16T04:12:54Z
dc.date.issued1989-01-01 to 1989-12-31en_US
dc.identifierRLE_PR_132_01_01s_09en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57127
dc.descriptionContains an introduction and reports on ten research projects.en_US
dc.description.sponsorshipCharles S. Draper Laboratory, Contract DL-H-315251en_US
dc.description.sponsorshipJoint Services Electronics Program, Contract DAAL03-89-C-0001en_US
dc.description.sponsorshipNational Science Foundation Grant, Grant EET 87-03404en_US
dc.description.sponsorshipMIT Fundsen_US
dc.description.sponsorshipInternational Business Machines Corporationen_US
dc.description.sponsorshipNational Science Foundation Grant ECS 84-13178en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofHeterostructures for High Performance Devicesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherHeterostructures for High Performance Devicesen_US
dc.subject.otherComputer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InPen_US
dc.subject.otherInGaAIAs Multiple Quantum Well Heterostructures for Guided Wave Opticsen_US
dc.subject.otherMBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applicationsen_US
dc.subject.otherInGaAIAs Strained-Layer Heterostructures on 111 GaAs for Optical for Modulator Applicationsen_US
dc.subject.otherInGaAIAs Strained-Layer Heterostructures on InP for Optical for Modulator Applicationsen_US
dc.subject.otherMolecular Beam Epitaxial Growth on (h11) Vicinal Surfacesen_US
dc.subject.otherPseudomorphic AIAs/InAs/InGaAs Resonant Tunneling Structuresen_US
dc.subject.otherThree-Terminal Quantum Well Base/Tunnel Barrier Devicesen_US
dc.subject.otherDesign of GaAIAs Heterostructure Laser Diodes for Monolithic Integration with Si Circuitsen_US
dc.subject.otherFabrication of GaAIAs Heterostructure Laser Diodes for Monolithic Integration with Si Circuitsen_US
dc.subject.otherMicrobridge Suspension of Monolithic GaAIAs Heterostructures Grown on Si by MBEen_US
dc.subject.otherDamage-Free In-Situ UHV Etching of Ill-V Heterostructures Using Molecular Beamsen_US
dc.subject.otherDamage-Free In-Situ UHV Cleaning of Ill-V Heterostructures Using Molecular Beamsen_US
dc.titleHeterostructures for High Performance Devicesen_US
dc.typeTechnical Reporten_US


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