High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Author(s)del Alamo, Jesus A.; Bahl, Sandeep R.; Azzam, Walid; Leary, Michael H.; Odoardi, Angela R.
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Contains an introduction, reports on two research projects and a list of publications and conference papers.
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 133