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Gas Source Molecular Beam Epitaxy of Compound Semiconductors

dc.contributor.authorKolodziejski, Leslie A.en_US
dc.contributor.authorPetrich, Gale S.en_US
dc.contributor.authorFisher, Philip A.en_US
dc.contributor.authorHo, Easenen_US
dc.contributor.authorHouse, Jody L.en_US
dc.contributor.authorGeraci, James R.en_US
dc.contributor.authorLu, Kanen_US
dc.contributor.authorHaus, Hermann A.en_US
dc.contributor.authorSmith, Henry I.en_US
dc.contributor.authorDamask, Jay N.en_US
dc.contributor.authorMarley, Elisabeth A.en_US
dc.contributor.authorFonstad, Clifton G., Jr.en_US
dc.contributor.authorAhadian, Joseph F.en_US
dc.contributor.authorShenoy, Krishna V.en_US
dc.contributor.authorJoannopoulos, John D.en_US
dc.contributor.authorReif, L. Rafaelen_US
dc.contributor.authorLim, Kuo-Yien_US
dc.contributor.authorTang, Xiaofengen_US
dc.contributor.authorThompson, Carl V.en_US
dc.contributor.authorDonovan, Sean M.en_US
dc.date.accessioned2010-07-16T20:35:09Z
dc.date.available2010-07-16T20:35:09Z
dc.date.issued1994-01-01 to 1994-12-31en_US
dc.identifierRLE_PR_137_01_01s_03en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57298
dc.descriptionContains an introduction and reports on seven research projects.en_US
dc.description.sponsorshipAdvanced Research Projects Agency Subcontract 284-25041en_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAL03-92-C-0001en_US
dc.description.sponsorshipJoint Services Electronics Program Grant DAAH-04-95-1-0038en_US
dc.description.sponsorshipNational Center for Integrated Photonic Technology Contract 542-381en_US
dc.description.sponsorshipNational Center for Integrated Photonic Technology Grant subcontract 652-693en_US
dc.description.sponsorshipU.S. Army Research Office/ AASERT Contract DAAH04-93-G-0175en_US
dc.description.sponsorshipNational Science Foundation Grant DMR 92-02957en_US
dc.description.sponsorshipNational Science Foundation Grant DMR 92-02957en_US
dc.description.sponsorshipNational Science Foundation Grant DMR 90-22933en_US
dc.description.sponsorshipMIT Lincoln Laboratory Contract BX-5411en_US
dc.description.sponsorshipNational Science Foundation DMR 94-00334en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1994en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofGas Source Molecular Beam Epitaxy of Compound Semiconductorsen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 137en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherGas Source Molecular Beam Epitaxy of Compound Semiconductorsen_US
dc.subject.otherGas Source Molecular Beam Epitaxy of ZnSeen_US
dc.subject.otherGas Source Molecular Beam Epitaxy of ZnSe:CIen_US
dc.subject.otherGas Source Molecular Beam Epitaxy of ZnSe:Nen_US
dc.subject.otherNovel Epitaxial Ill-V Buffer Layers for Wide Bandgap II-VI Visible Sourcesen_US
dc.subject.otherHeterovalent Interfaces Composed of II-VI/IIIl-V Semiconductorsen_US
dc.subject.other(In,Ga)(As,P)/InP Semiconductor Waveguide Design for Synchronously Side-Coupled Bragg Resonatorsen_US
dc.subject.otherPhosphide-Based Optical Emitters for Monolithic Integration with GaAs MESFETsen_US
dc.subject.otherPhotonic Bandgap Structuresen_US
dc.subject.otherHeteroepitaxy of GaAs onto Corrugated Surfaces of Sien_US
dc.titleGas Source Molecular Beam Epitaxy of Compound Semiconductorsen_US
dc.typeTechnical Reporten_US


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