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dc.contributor.authorKim, Tae-Woo
dc.contributor.authorKim, Dae-Hyun
dc.contributor.authordel Alamo, Jesus A.
dc.date.accessioned2010-10-21T20:02:28Z
dc.date.available2010-10-21T20:02:28Z
dc.date.issued2010-03
dc.date.submitted2009-12
dc.identifier.isbn978-1-4244-5640-6
dc.identifier.isbn978-1-4244-5639-0
dc.identifier.otherINSPEC Accession Number: 11207346
dc.identifier.urihttp://hdl.handle.net/1721.1/59453
dc.description.abstractWe have fabricated 30 nm In0.7Ga0.3As Inverted-Type HEMTs with outstanding logic performance, scalability and high frequency characteristics. The motivation for this work is the demonstration of reduced gate leakage current in the Inverted HEMT structure. The fabricated devices show excellent Lg scalability down to 30 nm. Lg = 30 nm devices have been fabricated with exhibit gm = 1.27 mS/mu m, S = 83 mV/dec, DIBL = 118 mV/V, ION/IOFF = 4 x 10[superscript 4], all at 0.5 V. More significantly, the removal of dopants from the barrier suppresses forward gate leakage current by over 100X when compared with equivalent normal HEMTs. The Lg = 30 nm devices also feature record high-frequency characteristics for an inverted-type HEMT design with fT = 500 GHz and fmax = 550 GHz.en_US
dc.description.sponsorshipIntel Corporationen_US
dc.description.sponsorshipSemiconductor Research Corporation. Center for Materials, Structures and Devicesen_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/IEDM.2009.5424317en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.title30 nm In[subscript 0.7]Ga[subscript 0.3]As inverted-type HEMTs with reduced gate leakage current for logic applicationsen_US
dc.title.alternative30 nm In0.7Ga0.3As inverted-type HEMTs with reduced gate leakage current for logic applicationsen_US
dc.typeArticleen_US
dc.identifier.citationTae-Woo Kim, Dae-Hyun Kim, and J.A. del Alamo. “30 nm In0.7Ga0.3As Inverted-Type HEMTs with reduced gate leakage current for logic applications.” Electron Devices Meeting (IEDM), 2009 IEEE International. 2009. 1-4. ©2010 Institute of Electrical and Electronics Engineers.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.approverdel Alamo, Jesus A.
dc.contributor.mitauthorKim, Tae-Woo
dc.contributor.mitauthorKim, Dae-Hyun
dc.contributor.mitauthordel Alamo, Jesus A.
dc.relation.journal2009 IEEE International Electron Devices Meeting (IEDM)en_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsTae-Woo Kim; Kim, Dae-Hyun; del Alamo, Jesus A.en
mit.licensePUBLISHER_POLICYen_US


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