Low-voltage spatial-phase-locked scanning-electron-beam lithography

Author(s)
Cheong, Lin Lee
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Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Advisor
Henry I. Smith.
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Abstract
Spatial-phase-locked electron-beam lithography (SPLEBL) is a method that tracks and corrects the position of an electron-beam in real-time by using a reference grid placed above the electron-beam resist. In this thesis, the feasibility of spatial-phase-locked lowvoltage electron-beam lithography is investigated. First, the feasibility of low-voltage electron-beam lithography (LVEBL) is experimentally verified using the resists hydrogen silsesquioxane (HSQ) and polymethyl methacrylate (PMMA). Unlike electronbeam lithography at higher voltages, LVEBL has minimal proximity effects and is not resolution-limited by these effects. The fabrication of ultra-thin photoresist grids is investigated and the secondary electron signal levels of these grids are measured.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.
 
Includes bibliographical references (p. 63-64).
 
Date issued
2010
URI
http://hdl.handle.net/1721.1/60159
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.
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