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Band-to-band tunneling in silicon diodes and tunnel transistors

Author(s)
Teherani, James Towfik
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Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Advisor
Judy L. Hoyt and Dimitri A. Antoniadis.
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M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582
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Abstract
This work studies the effect of mechanically applied uniaxial strain on reverse-bias band-to-band tunneling current in n+/p+ vertical silicon diodes fabricated on {100} and {110} substrate orientations. The Band Structure Lab and nextnano are used to analyze the change in band structure with uniaxial stress applied perpendicular to the tunneling direction along <100> and <110> crystal directions. A theoretical analysis based on the Wentzel-Kramers-Brillouin (WKB) approximation for tunneling probability combined with an uncoupled full-band Poisson equation solver and the calculated band structure changes is developed to model the experimental results. Reasonable agreement between experimental data and theoretical calculations is found when comparing the relative change in tunneling current at 1 V reverse-bias versus strain for different substrate orientation/strain configurations.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.
 
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
 
Cataloged from student submitted PDF version of thesis.
 
Includes bibliographical references (p. 82-83).
 
Date issued
2010
URI
http://hdl.handle.net/1721.1/60215
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.

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