Retrograde melting in transition metal-silicon systems : thermodynamic modeling, experimental verification, and potential application
Name
712947474-MIT.pdf
Description
Full printable version
Size
13.04 MB
Format
Adobe PDF
Checksum (MD5)
52d5afffe12bda74847a58e34c2ace4c
Author(s)
Fenning, David P
Advisor(s)
Tonio Buonassisi.
Date Issued
2010
Publisher
Massachusetts Institute of Technology
Abstract
A theoretical framework is presented in this work for retrograde melting in silicon driven by the retrograde solubility of low-concentration metallic solutes at temperatures above the binary eutectic. High enthalpy of formation of point defects in silicon leads to retrograde solubility for a number of solutes, including many 3d transition metals. The Ni-Si system is used to demonstrate that in silicon under supersaturated conditions, such solutes precipitate out into liquid droplets. Synchrotron-based Xray Absorption Microspectroscopy measurements provide experimental confirmation of such phase transitions and the underlying thermodynamics. Finally, the potential for using retrograde melting to improve the electronic minority carrier lifetime of low quality silicon solar cell materials is considered.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2010.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 97-103).
Subjects
Mechanical Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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