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Retrograde melting in transition metal-silicon systems : thermodynamic modeling, experimental verification, and potential application

Author(s)
Fenning, David P
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Massachusetts Institute of Technology. Dept. of Mechanical Engineering.
Advisor
Tonio Buonassisi.
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M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582
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Abstract
A theoretical framework is presented in this work for retrograde melting in silicon driven by the retrograde solubility of low-concentration metallic solutes at temperatures above the binary eutectic. High enthalpy of formation of point defects in silicon leads to retrograde solubility for a number of solutes, including many 3d transition metals. The Ni-Si system is used to demonstrate that in silicon under supersaturated conditions, such solutes precipitate out into liquid droplets. Synchrotron-based Xray Absorption Microspectroscopy measurements provide experimental confirmation of such phase transitions and the underlying thermodynamics. Finally, the potential for using retrograde melting to improve the electronic minority carrier lifetime of low quality silicon solar cell materials is considered.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2010.
 
Cataloged from PDF version of thesis.
 
Includes bibliographical references (p. 97-103).
 
Date issued
2010
URI
http://hdl.handle.net/1721.1/62530
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Publisher
Massachusetts Institute of Technology
Keywords
Mechanical Engineering.

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