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dc.contributor.advisorLionel C. Kimerling.en_US
dc.contributor.authorNguyen, Nguyen Hoangen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2011-05-09T15:18:41Z
dc.date.available2011-05-09T15:18:41Z
dc.date.copyright2010en_US
dc.date.issued2010en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/62679
dc.descriptionThesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.en_US
dc.descriptionCataloged from student submitted PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (p. 89-92).en_US
dc.description.abstractElectrical copper-based interconnect has been suffering from fundamental physical loss mechanism and its current infrastructure will not be able to meet the increasing demand for data rates due to reaching the limit of the transmission bandwidth-distance product. Optical interconnect has been known as the candidate for taking over the obsolete electrical counterpart owing to the capability of transmitting data at high rates with low loss and the feasibility for parallel integration. Optoelectronic transceiver is one of the essential elements in optical interconnect system. This thesis scrutinizes a complete set of constituent technologies developed for a novel inter-chip parallel optoelectronic (OE) transceiver (known as Terabus transceiver) which is able to communicate data at the speed in the range of Terabit/second. A novel packaging hierarchy and a creative design for an optical coupling mechanism devised to bring high-level integration and high-speed performance to a final package have been analyzed: Two 4x12 arrays (each < 9 mm2) of CMOS transmitter and receiver ICs have been flip-chip bonded to a silicon carrier interposer of 1.2-cm2 size. Other two 4x12 arrays of OE devices (VCSELs and photodiodes) with comparable size are then flip-chip bonded to the corresponding CMOS arrays attached to the silicon carrier, forming the Optochip assembly. The Optochip is in interface with an Optocard by the flip-chip bonding process between the silicon carrier and an organic card patterned with 48 integrated waveguides at density of 16-channel/mm and total length of 30 cm. The 985-nm operating wavelength of the lasers allows a simple optical design with emission and illumination through arrays of relay lenses directly etched into the backside of the OE Ill-V substrate. A novel design of 45*-tilted and Au-coated mirrors fabricated in 125-ptmpitch acrylate waveguides is to perpendicularly couple the light in and out of the core of these Optocard waveguides. Per-channel performance of up to 20 Gb/s for transmitter and of up to 14 Gb/s for receiver have been realized. Lastly, the thesis has analyzed the market opportunity of the transceiver by reviewing the market situation, identifying contemporary competing technologies, assessing the market prospect and predicting the cost.en_US
dc.description.statementofresponsibilityby Nguyen Hoang Nguyen.en_US
dc.format.extent93 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineering.en_US
dc.titleAnalysis of terabit/second-class inter-chip parallel optoelectronic transceiveren_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc714361038en_US


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