Sub-10-nm electron-beam lithography for templated placement of colloidal quantum dots
Author(s)
Manfrinato, Vitor Riseti![Thumbnail](/bitstream/handle/1721.1/68504/770675473-MIT.pdf.jpg?sequence=5&isAllowed=y)
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Other Contributors
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Advisor
Karl K. Berggren.
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This thesis presents the investigation of resolution limits of electron-beam lithography (EBL) at the sub-10-nm scale. EBL patterning was investigated at low electron energy (2 keV) in a converted scanning electron microscope and at high electron energy (200 keV) in an aberration-corrected scanning transmission electron microscope. Sub-10-nm structures were fabricated and proximity effects were evaluated in both conditions. As an application of sub-10-nm EBL, this thesis presents a templated-self-assembly technique to control the position of individual colloidal quantum dots smaller than 10 nm.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011. Cataloged from PDF version of thesis. Includes bibliographical references (p. 53-55).
Date issued
2011Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer SciencePublisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.