Sub-10-nm electron-beam lithography for templated placement of colloidal quantum dots

Abstract

This thesis presents the investigation of resolution limits of electron-beam lithography (EBL) at the sub-10-nm scale. EBL patterning was investigated at low electron energy (2 keV) in a converted scanning electron microscope and at high electron energy (200 keV) in an aberration-corrected scanning transmission electron microscope. Sub-10-nm structures were fabricated and proximity effects were evaluated in both conditions. As an application of sub-10-nm EBL, this thesis presents a templated-self-assembly technique to control the position of individual colloidal quantum dots smaller than 10 nm.