Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume
Author(s)
Hoagland, R. G.; Uberuaga, B. P.; Misra, Amit; Demkowicz, Michael J.
DownloadDemkowicz-2011-Influence of interface sink strength on the.pdf (355.1Kb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
We use a reaction–diffusion model to demonstrate that buried interfaces in polycrystalline composites simultaneously reduce both the concentrations and the fluxes of radiation-induced defects. The steady-state radiation-induced defect concentrations, however, are highly sensitive to the interface sink strength η. Materials containing a large volume fraction of interfaces may therefore be resistant to multiple forms of radiation-induced degradation, such as swelling and hardening, as well as to embrittlement by solute segregation, provided that the interfaces have suitable η values.
Date issued
2011-09Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
Physical Review B
Publisher
American Physical Society (APS)
Citation
Demkowicz, M. et al. “Influence of Interface Sink Strength on the Reduction of Radiation-induced Defect Concentrations and Fluxes in Materials with Large Interface Area Per Unit Volume.” Physical Review B 84.10 (2011): n. pag. Web. 17 Feb. 2012. © 2011 American Physical Society
Version: Final published version
ISSN
1098-0121
1550-235X