dc.contributor.author | Wang, Wan-Sheng | |
dc.contributor.author | Xiang, Yuan-Yuan | |
dc.contributor.author | Wang, Qiang-Hua | |
dc.contributor.author | Wang, Fa | |
dc.contributor.author | Yang, Fan | |
dc.contributor.author | Lee, Dung-Hai | |
dc.date.accessioned | 2012-08-08T17:10:02Z | |
dc.date.available | 2012-08-08T17:10:02Z | |
dc.date.issued | 2012-01 | |
dc.date.submitted | 2011-11 | |
dc.identifier.issn | 1098-0121 | |
dc.identifier.issn | 1550-235X | |
dc.identifier.uri | http://hdl.handle.net/1721.1/72036 | |
dc.description.abstract | We study the electronic instabilities of near 1/4 electron doped graphene using the singular-mode functional renormalization group, with a self-adaptive k mesh to improve the treatment of the van Hove singularities, and variational Monte Carlo method. At 1/4 doping the system is a chiral spin-density wave state exhibiting the anomalous quantized Hall effect. When the doping deviates from 1/4, the dx[superscript 2]−y[superscript 2]+id[subscript xy] Cooper pairing becomes the leading instability. Our results suggest that near 1/4 electron or hole doping (away from the neutral point) the graphene is either a Chern insulator or a topoligical superconductor. | en_US |
dc.description.sponsorship | National Natural Science Foundation (China) (grant nos. 10974086 and 10734120) | en_US |
dc.description.sponsorship | National Natural Science Foundation (China) (grant no. 10704008) | en_US |
dc.description.sponsorship | United States. Dept. of Energy (grant no. DE-AC02-05CH11231) | en_US |
dc.description.sponsorship | China. Ministry of Science and Technology (grant 2011CB922101) | en_US |
dc.description.sponsorship | China. Ministry of Science and Technology (grant 2011CBA00108) | en_US |
dc.language.iso | en_US | |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevB.85.035414 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | APS | en_US |
dc.title | Functional renormalization group and variational Monte Carlo studies of the electronic instabilities in graphene near 1/4 doping | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Wang, Wan-Sheng et al. “Functional Renormalization Group and Variational Monte Carlo Studies of the Electronic Instabilities in Graphene Near 1/4 Doping.” Physical Review B 85.3 (2012): 035414-1-035414-6. ©2012 American Physical Society. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Physics | en_US |
dc.contributor.approver | Wang, Fa | |
dc.contributor.mitauthor | Wang, Fa | |
dc.relation.journal | Physical Review B | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Wang, Wan-Sheng; Xiang, Yuan-Yuan; Wang, Qiang-Hua; Wang, Fa; Yang, Fan; Lee, Dung-Hai | en |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |