An unreleased mm-wave resonant body transistor

Author(s)
Wang, Wentao; Popa, Laura Cornelia; Marathe, Radhika A.; Weinstein, Dana
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Abstract
In this work, we present the first fully unreleased Micro-Electro-Mechanical (MEM) resonator. The 1st harmonic longitudinal resonance of a silicon FinFET fully clad in SiO[subscript 2] is demonstrated. The device exhibits two resonances at 39 and 41 GHz, corresponding well with simulation results. The quality factor (Q) of 129 at 39 GHz is ~4× lower than that of its released counterpart. Methods to improve Q and reduce spurious modes are introduced. This first demonstration of unreleased resonators in a hybrid MEMS-CMOS technology can provide RF and microwave CMOS circuit designers with active high-Q devices monolithically integrated in Front-End-of-Line (FEOL) processing without the need for post-processing or special packaging.
Date issued
2011-03
URI
http://hdl.handle.net/1721.1/73576
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Department of Physics
Journal
Proceedings of the IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS), 2011
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wang, Wentao et al. “An Unreleased Mm-wave Resonant Body Transistor.” IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS), 2011. 1341–1344.
Version: Author's final manuscript
ISBN
978-1-4244-9634-1
978-1-4244-9632-7
ISSN
1084-6999
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