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The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates

Author(s)
Zang, Keyan; Chua, Soo-Jin; Thompson, Carl V.
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Abstract
The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN films with decreased tensile stresses and decreased threading dislocation densities, as well as films with improved quality as indicated by x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. The possible mechanism of the reduction of tensile stress and the dislocation density is discussed in the paper.
Date issued
2005-01
URI
http://hdl.handle.net/1721.1/7362
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Keywords
Metal-organic Chemical Vapour Deposition, III-V Nitrides

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