High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching
Author(s)Vajpeyi, Agam P.; Chua, Soo-Jin; Tripathy, S.; Fitzgerald, Eugene A.
MetadataShow full item record
Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
gallium nitride, porous semiconductors, ultraviolet assisted electrochemical etching, nanoporous GaN film