Oblique Angle Deposition of Germanium Film on Silicon Substrate

Author(s)
Chew, Han Guan; Choi, Wee Kiong; Chim, Wai Kin; Fitzgerald, Eugene A.
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Abstract
The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy.
Date issued
2005-01
URI
http://hdl.handle.net/1721.1/7370
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Keywords
Oblique angle deposition, Germanium nanowires
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