BN/Graphene/BN Transistors for RF Applications

Author(s)
Taychatanapat, Thiti; Wang, Han; Hsu, Allen Long; Watanabe, Kenji; Taniguchi, Takashi; ... Show more
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Abstract
In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.
Date issued
2011-08
URI
http://hdl.handle.net/1721.1/74004
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Physics
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wang, Han et al. “BN/Graphene/BN Transistors for RF Applications.” IEEE Electron Device Letters 32.9 (2011): 1209-1211.
Version: Author's final manuscript
ISSN
0741-3106
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