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dc.contributor.authorFu, Yongqi
dc.contributor.authorNgoi, Kok Ann Bryan
dc.date.accessioned2004-12-14T19:33:15Z
dc.date.available2004-12-14T19:33:15Z
dc.date.issued2005-01
dc.identifier.urihttp://hdl.handle.net/1721.1/7450
dc.description.abstractHoles with different sizes from microscale to nanoscale were directly fabricated by focused ion beam (FIB) milling in this paper. Maximum aspect ratio of the fabricated holes can be 5:1 for the hole with large size with pure FIB milling, 10:1 for gas assistant etching, and 1:1 for the hole with size below 100 nm. A phenomenon of volume swell at the boundary of the hole was observed. The reason maybe due to the dose dependence of the effective sputter yield in low intensity Gaussian beam tail regions and redeposition. Different materials were used to investigate variation of the aspect ratio. The results show that for some special material, such as Ni-Be, the corresponding aspect ratio can reach 13.8:1 with Cl₂ assistant etching, but only 0.09:1 for Si(100) with single scan of the FIB.en
dc.description.sponsorshipSingapore-MIT Alliance (SMA)en
dc.format.extent509804 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen
dc.relation.ispartofseriesInnovation in Manufacturing Systems and Technology (IMST);
dc.subjectAFMen
dc.subjectmicro-holeen
dc.subjectFIBen
dc.subjectCI2en
dc.titleInvestigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine millingen
dc.typeArticleen


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