Simulation of iron impurity gettering in crystalline silicon solar cells
Author(s)
Powell, Douglas M. (Douglas Michael)
DownloadFull printable version (9.590Mb)
Other Contributors
Massachusetts Institute of Technology. Dept. of Mechanical Engineering.
Advisor
Tonio Buonassisi.
Terms of use
Metadata
Show full item recordAbstract
This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also includes a device simulator to calculate cell performance after processing. By linking input materials, processing, and cell performance, 12E enables accelerated solar cell optimization. Herein, background information on the economic drivers of solar cell installations and manufacturing are used to introduce the importance of iron impurity engineering. The fundamental physics of gettering and the development of the numerical methods employed by the tool are presented. The development, deployment, and use of the web applet are also discussed.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2012. Cataloged from PDF version of thesis. Includes bibliographical references (p. 52-56).
Date issued
2012Department
Massachusetts Institute of Technology. Department of Mechanical EngineeringPublisher
Massachusetts Institute of Technology
Keywords
Mechanical Engineering.