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Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
(Massachusetts Institute of Technology, 2014)
GaN HEMTs (High Electron Mobility Transistors) are promising candidates for high power and high frequency applications but their reliability needs to be established before their wide deployment can be realized. In this ...
Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
(Massachusetts Institute of Technology, 2017)
AlGaN/GaN High Electron Mobility Transistors (HEMTs) have enjoyed tremendous market growth in RF power amplifiers over the past decades. In the quest for enhancing the operating frequency of GaN HEMTs, there has been a ...