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Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
(Massachusetts Institute of Technology, 2014)
GaN HEMTs (High Electron Mobility Transistors) are promising candidates for high power and high frequency applications but their reliability needs to be established before their wide deployment can be realized. In this ...
Supply response to consumer inertia : strategic pricing in Medicare Part D
(Massachusetts Institute of Technology, 2016)
A growing literature has documented evidence that consumers in health insurance markets are inertial, or behave as though they face substantial switching costs in choosing a health insurance plan. I investigate whether the ...
Essays on health economics
(Massachusetts Institute of Technology, 2016)
The first chapter explores strategic insurer pricing in response to consumer inertia. A growing literature has documented evidence that consumers in health insurance markets are inertial, or behave as though they face ...
Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
(Massachusetts Institute of Technology, 2017)
AlGaN/GaN High Electron Mobility Transistors (HEMTs) have enjoyed tremendous market growth in RF power amplifiers over the past decades. In the quest for enhancing the operating frequency of GaN HEMTs, there has been a ...