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Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

Author(s)
Lee, Yun Seog; Winkler, Mark Thomas; Siah, Sin Cheng; Brandt, Riley E; Buonassisi, Anthony
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Abstract
Cuprous oxide (Cu[subscript 2]O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu[subscript 2]O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu[subscript 2]O at temperatures above 250 K, reaching 62 cm[superscript 2]/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu[subscript 2]O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.
Date issued
2011-05
URI
http://hdl.handle.net/1721.1/78003
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity; Massachusetts Institute of Technology. School of Engineering
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Lee, Yun Seog et al. “Hall Mobility of Cuprous Oxide Thin Films Deposited by Reactive Direct-current Magnetron Sputtering.” Applied Physics Letters 98.19 (2011): 192115. © 2011 American Institute of Physics
Version: Final published version
ISSN
0003-6951
1077-3118

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