Ge-on-Si laser operating at room temperature
Author(s)Liu, Jifeng; Sun, Xiaochen; Kimerling, Lionel C.; Michel, Jurgen; Camacho-Aguilera, Rodolfo Ernesto
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Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature photoluminescence, electroluminescence, and optical gain from the direct gap transition of band-engineered Ge-on-Si using tensile strain and n-type doping. Here we report what we believe to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device. The emission exhibited a gain spectrum of 1590–1610 nm, line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior.
DepartmentMassachusetts Institute of Technology. Materials Processing Center; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics Center
Optical Society of America
Liu, Jifeng, Xiaochen Sun, Rodolfo Camacho-Aguilera, Lionel C. Kimerling, and Jurgen Michel. “Ge-on-Si laser operating at room temperature.” Optics Letters 35, no. 5 (February 24, 2010): 679. © 2010 Optical Society of America
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