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dc.contributor.authorWang, Jianfei
dc.contributor.authorZens, Timothy
dc.contributor.authorHu, Juejun
dc.contributor.authorBecla, Piotr
dc.contributor.authorKimerling, Lionel C.
dc.contributor.authorAgarwal, Anuradha Murthy
dc.date.accessioned2013-07-29T14:35:48Z
dc.date.available2013-07-29T14:35:48Z
dc.date.issued2011-05
dc.identifier.issn0277-786X
dc.identifier.urihttp://hdl.handle.net/1721.1/79717
dc.description.abstractIn this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the resonant wavelength of 3.5 μm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 × 10[superscript 9]cmHz[superscript 1/2]W[superscript 1] has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 °C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits.en_US
dc.description.sponsorshipMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.description.sponsorshipMassachusetts Institute of Technology. Center for Materials Science and Engineeringen_US
dc.language.isoen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.884081en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceSPIEen_US
dc.titleResonant cavity enhancement of polycrystalline PbTe films for IR detectors on Si-ROICsen_US
dc.typeArticleen_US
dc.identifier.citationWang, Jianfei, Timothy Zens, Juejun Hu, Piotr Becla, Anuradha M. Agarwal, and Lionel C. Kimerling. “Resonant cavity enhancement of polycrystalline PbTe films for IR detectors on Si-ROICs.” Proc. SPIE 8034, Photonic Microdevices/Microstructures for Sensing III, 80340K (May 16, 2011). © (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE)en_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.mitauthorWang, Jianfeien_US
dc.contributor.mitauthorZens, Timothyen_US
dc.contributor.mitauthorHu, Juejunen_US
dc.contributor.mitauthorBecla, Piotren_US
dc.contributor.mitauthorAgarwal, Anuradha Murthyen_US
dc.contributor.mitauthorKimerling, Lionel C.en_US
dc.relation.journalProceedings of SPIE--the International Society for Optical Engineering; v. 8034en_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWang, Jianfei; Zens, Timothy; Hu, Juejun; Becla, Piotr; Agarwal, Anuradha M.; Kimerling, Lionel C.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-7233-3918
dc.identifier.orcidhttps://orcid.org/0000-0002-0769-0652
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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