Room-temperature oxygen sensitization in highly textured, nanocrystalline PbTe films: A mechanistic study
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In this paper, we report large mid-wave infrared photoconductivity in highly textured, nanocrystalline PbTe films thermally evaporated on Si at room temperature. Responsivity as high as 25 V/W is measured at the 3.5 μm wavelength. The large photoconductivity is attributed to the oxygen incorporation in the films by diffusion. Carrier concentration as low as 10[superscript 17] cm[superscript −3] is identified to be the consequence of Fermi level pinning induced by the diffused oxygen. The successful demonstration of IR-sensitive PbTe films without the need for high-temperature processing presents an important step toward monolithic integration of mid-wave PbTe infrared detectors on Si read-out integrated circuits (ROICs).
Date issued
2011-10Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics CenterJournal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Wang, Jianfei, Juejun Hu, Piotr Becla, Anuradha M. Agarwal, and Lionel C. Kimerling. “Room-temperature oxygen sensitization in highly textured, nanocrystalline PbTe films: A mechanistic study.” Journal of Applied Physics 110, no. 8 (2011): 083719. © 2011 American Institute of Physics
Version: Final published version
ISSN
00218979
1089-7550