| dc.contributor.advisor | Jesús A. del Alamo. | en_US |
| dc.contributor.author | Blanchard, Roxann Russell | en_US |
| dc.date.accessioned | 2013-08-22T18:49:57Z | |
| dc.date.available | 2013-08-22T18:49:57Z | |
| dc.date.copyright | 1999 | en_US |
| dc.date.issued | 1999 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/80077 | |
| dc.description | Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999. | en_US |
| dc.description | Includes bibliographical references (p. 125-133). | en_US |
| dc.description.statementofresponsibility | by Roxann Russell Blancard. | en_US |
| dc.format.extent | 133 p. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Massachusetts Institute of Technology | en_US |
| dc.rights | M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission. | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | en_US |
| dc.subject | Electrical Engineering and Computer Science | en_US |
| dc.title | Hydrogen degradation on InP HEMTs | en_US |
| dc.title.alternative | Hydrogen degradation on indium phospide high-electron-mobility transistors | en_US |
| dc.type | Thesis | en_US |
| dc.description.degree | Ph.D. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | |
| dc.identifier.oclc | 43482443 | en_US |
