| dc.contributor.advisor | Stephen D. Senturia. | en_US |
| dc.contributor.author | Li, James Chingwei, 1975- | en_US |
| dc.date.accessioned | 2013-08-22T18:51:28Z | |
| dc.date.available | 2013-08-22T18:51:28Z | |
| dc.date.copyright | 1999 | en_US |
| dc.date.issued | 1999 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/80100 | |
| dc.description | Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999. | en_US |
| dc.description | Includes bibliographical references (p. 119-121). | en_US |
| dc.description.statementofresponsibility | by James Chingwei Li. | en_US |
| dc.format.extent | 148 p. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Massachusetts Institute of Technology | en_US |
| dc.rights | M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission. | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | en_US |
| dc.subject | Electrical Engineering and Computer Science | en_US |
| dc.title | Modeling poly-silicon gate depletion in submicron MOS devices | en_US |
| dc.title.alternative | Modeling poly-silicon gate depletion in submicron metal oxide semiconductor devices | en_US |
| dc.type | Thesis | en_US |
| dc.description.degree | M.Eng. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | |
| dc.identifier.oclc | 43521403 | en_US |
