Two-dimensional materials for ubiquitous electronics

Abstract

Ubiquitous electronics will be a very important component of future electronics. However, today's approaches to large area, low cost, potentially ubiquitous electronic devices are currently dominated by the low mobility of amorphous silicon and organic semiconductor. Two-dimensional materials are good candidates for ubiquitous electronics because of their excellent properties such as transparency, flexibility, high mobility and low cost. This thesis focused on the development of the first devices and circuits based on transition metal dichalcogenides (TMDs), a family of two dimensional semiconductors. The transport properties of exfoliated few layer flakes MoS2 and chemical vapor deposition (CVD) grown single layer large area MoS2 are systematically studies. Integrated devices and circuits based on large-scale single-layer MoS2 grown by CVD are demonstrated for the first time. The transistors fabricated on this material demonstrate excellent characteristics such as record mobility for CVD MoS 2, ultra-high on/off current ratio, record current density and GHz RF performance. The demonstration of both digital and analogue circuits shows the remarkable capability of this single- molecular- layer thick material for mixed-signal applications, offering scalable new materials that can combine silicon-like performance with the mechanical flexibility and integration versatility of organic semiconductors.