Iron (III) Chloride doping of large-area chemical vapor deposition graphene

Abstract

Chemical doping is an effective method of reducing the sheet resistance of graphene. This thesis aims to develop an effective method of doping large area Chemical Vapor Deposition (CVD) graphene using Iron (III) Chloride (FeCl 3). It is shown that evaporating FeCl3 can increase the carrier concentration of monolayer graphene to greater than 7x1 0 3CM2 and achieve resistances as low 72[Omega]/sq. We also evaluate other important properties of the doped graphene such as surface cleanliness, air stability, and solvent stability. Furthermore, we compare FeCl3 to three other common dopants: Gold (III) Chloride (AuCl3), Nitric Acid (I-N0 3), and TFSA ((CF 3SO2)2NH). We show that compared to these dopants, FeCl3 can not only achieve better sheet resistance but also has other key advantages including better solvent stability and better heat stability.