Design, fabrication and characterization of terahertz quantum-well photodetectors
Author(s)
Huang, Shengxi, Ph. D. Massachusetts Institute of Technology
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Other Contributors
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Advisor
Qing Hu.
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Terahertz (THz) photodetectors are important in the fully exploration and development of electromagnetic spectrum. However, a fast and sensitive THz photodetector ready for array integration is not available. A THz Quantum-well Photodetector (QWP) has the properties of being fast, sensitive, low-noise, and narrow-band. It is promising for large-array integration for THz imaging. In addition, a THz QWP-LED (Light-Emitting Diode) can upconvert the THz to NIR radiation and useful for THz imaging in Focal-Plane Array (FPA). In this thesis project, the theory of the intersubband transition and carrier transport in a THz QWP is studied. The designe, fabrication, measurement-system buildup, and characterization are performed. In addition, the design and fabrication process of THz QWP-LED are also carried out. Such devices have potential applications in many fields such as biology, medication and security.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013. Cataloged from PDF version of thesis. Includes bibliographical references (p. 139-144).
Date issued
2013Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer SciencePublisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.