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Analysis of magnetic random access memory applications

Author(s)
Hernandez, Allison, 1979-
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Alternative title
Analysis of MRAM applications
Other Contributors
Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Advisor
Caroline A. Ross.
Terms of use
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582
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Abstract
Magnetic Random Access Memory (MRAM) is considered to be the most viable option for nonvolatile memory in the computer industry. This need for nonvolatile computer memory has resulted in the dramatic evolution of MRAM technology in the past ten years. Currently in the latter stages of development, emphasis is being put on experiments concerning optimization of density and reduction of the switching fields of the magnetic elements. Applications of MRAM technology are currently being explored by companies who seek to obtain relevant intellectual property in those areas. Once research is completed, companies must create a business plan that recognizes the initial, breakthrough markets and implement technology integration accordingly.
Description
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.
 
Includes bibliographical references (p. 45-47).
 
Date issued
2002
URI
http://hdl.handle.net/1721.1/8461
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Publisher
Massachusetts Institute of Technology
Keywords
Materials Science and Engineering.

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