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dc.contributor.advisorAugust F. Witt.en_US
dc.contributor.authorRittenhouse, Tilghman L. (Tilghman Lee), 1972-en_US
dc.date.accessioned2014-03-06T15:29:21Z
dc.date.available2014-03-06T15:29:21Z
dc.date.copyright1999en_US
dc.date.issued1999en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/85267
dc.descriptionThesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.en_US
dc.descriptionIncludes bibliographical references (leaves 88-90).en_US
dc.description.statementofresponsibilityby Tilghman L. Rittenhouse.en_US
dc.format.extent90 leavesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineeringen_US
dc.titleSingle crystal growth and characterization of silicon germanium alloysen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.identifier.oclc42713448en_US


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