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dc.contributor.advisorJung-Hoon Chun and Nannaji Saka.en_US
dc.contributor.authorKim, Sanha, Ph. D. Massachusetts Institute of Technologyen_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Mechanical Engineering.en_US
dc.date.accessioned2014-03-06T15:49:20Z
dc.date.available2014-03-06T15:49:20Z
dc.date.copyright2013en_US
dc.date.issued2013en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/85537
dc.descriptionThesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2013.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.abstractIn the manufacture of integrated circuits (IC) and micro-electromechanical systems (MEMS), chemical-mechanical polishing (CMP) is widely used for providing local and global planarization. In the CMP process, polishing pads, typically made of polyurethanes, play a key role. Due to the random, rough surface of the pad, only the tall asperities contact the wafer and transmit the necessary down force and motion to the abrasive particles for material removal. As the applied pressure is concentrated under few asperities, however, the asperities themselves, even though softer, may generate unintended micro-scratches on relatively hard surfaces under certain conditions. This thesis investigates the effects of topographical, mechanical, and tribological properties of the pad and of the wafer surfaces on pad scratching in CMP. The generation and probability of scratching by soft pad asperities on hard monolithic layers are modeled. At single-asperity sliding contact, the asperity contact pressure along with the interfacial friction that can induce surface layer yielding are first derived, for different asperity deformation modes: elastic, elastic but at the onset of yielding, elastic-plastic, and fully-plastic. Under multi-asperity sliding contact, the probability of scratching asperities is determined taking into account the asperity height variation of the rough pad surface. The models are further advanced for scratching of patterned Cu/dielectric layers. As a result, the conditions for and probability of scratching are presented in terms of the asperity-to-layer hardness ratio, friction coefficient, asperity modulus-hardness ratio and ratio of asperity radius to standard deviation of asperity heights. The scratching models are validated by performing sliding experiments using solid polymer pins and CMP pads. For scratch mitigation, especially, a novel, cost-effective asperity-flattening method is introduced to control the pad topography, i.e., to increase the ratio of asperity radius to standard deviation of asperity heights. Finally, the role of asperities in material removal is studied based on contact mechanics and abrasive wear models. A new material removal rate model is developed in terms of pad surface properties, and polishing experiments are conducted on Cu to validate the theoretical prediction that the asperity-flattened pads not only reduce the pad scratching but also improve the material removal rate.en_US
dc.description.statementofresponsibilityby Sanha Kim.en_US
dc.format.extent255 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMechanical Engineering.en_US
dc.titleMicro-scale scratching by soft pad asperities in chemical-mechanical polishingen_US
dc.typeThesisen_US
dc.description.degreePh. D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineering
dc.identifier.oclc871172454en_US


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