High thermoelectric performance by resonant dopant indium in nanostructured SnTe
Author(s)Liao, Bolin; Esfarjani, Keivan; Chen, Gang; Zhang, Qian; Lan, Yucheng; Lukas, Kevin; Liu, Weishu; Opeil, Cyril; Broido, David; Ren, Zhifeng; ... Show more Show less
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From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this work, we studied the thermoelectric properties of nanostructured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck coefficients that cannot be explained properly by the conventional two-valence band model. We attributed this enhancement of Seebeck coefficients to resonant levels created by the indium impurities inside the valence band, supported by the first-principles simulations. This, together with the lower thermal conductivity resulting from the decreased grain size by ball milling and hot pressing, improved both the peak and average nondimensional figure-of-merit (ZT) significantly. A peak ZT of ~1.1 was obtained in 0.25 atom % In-doped SnTe at about 873 K.
DepartmentMassachusetts Institute of Technology. Department of Mechanical Engineering
Proceedings of the National Academy of Sciences
National Academy of Sciences (U.S.)
Zhang, Q., B. Liao, Y. Lan, K. Lukas, W. Liu, K. Esfarjani, C. Opeil, D. Broido, G. Chen, and Z. Ren. “High Thermoelectric Performance by Resonant Dopant Indium in Nanostructured SnTe.” Proceedings of the National Academy of Sciences 110, no. 33 (August 13, 2013): 13261–13266.
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