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dc.contributor.authorAraghchini, Mohammad
dc.contributor.authorChen, Jun
dc.contributor.authorDoan-Nguyen, Vicky
dc.contributor.authorHarburg, Daniel V.
dc.contributor.authorJin, Donghyun
dc.contributor.authorKim, Jungkwun
dc.contributor.authorKim, Min Soo
dc.contributor.authorLim, Seungbum
dc.contributor.authorLu, Bin
dc.contributor.authorPiedra, Daniel
dc.contributor.authorQiu, Jizheng
dc.contributor.authorRanson, John
dc.contributor.authorSun, Min
dc.contributor.authorYu, Xuehong
dc.contributor.authorYun, Hongseok
dc.contributor.authorAllen, Mark G.
dc.contributor.authorDesGroseilliers, Gary
dc.contributor.authorHerrault, Florian
dc.contributor.authorLang, Jeffrey H.
dc.contributor.authorLevey, Christopher G.
dc.contributor.authorMurray, Christopher B.
dc.contributor.authorPerreault, David J.
dc.contributor.authorSullivan, Charles R.
dc.contributor.authordel Alamo, Jesus A.
dc.contributor.authorOtten, David M.
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2014-05-15T15:06:29Z
dc.date.available2014-05-15T15:06:29Z
dc.date.issued2013-09
dc.date.submitted2012-09
dc.identifier.issn0885-8993
dc.identifier.issn1941-0107
dc.identifier.urihttp://hdl.handle.net/1721.1/86982
dc.description.abstractThe PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages (e.g., up to 200V) and low-to-moderate power levels (e.g., up to 50W) and demonstrating the technologies in a high-efficiency light-emitting diode driver, as an example application. This paper presents an overview of the program and of the progress toward meeting the program goals. Key program aspects and progress in advanced nitride power devices and device reliability, integrated high-frequency magnetics and magnetic materials, and high-frequency converter architectures are summarized.en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/TPEL.2013.2237791en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceVabulasen_US
dc.titleA Technology Overview of the PowerChip Development Programen_US
dc.typeArticleen_US
dc.identifier.citationAraghchini, Mohammad, Jun Chen, Vicky Doan-Nguyen, Daniel V. Harburg, Donghyun Jin, Jungkwun Kim, Min Soo Kim, et al. “A Technology Overview of the PowerChip Development Program.” IEEE Trans. Power Electron. 28, no. 9 (n.d.): 4182–4201.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.approverPerreault, David J.en_US
dc.contributor.mitauthorAraghchini, Mohammaden_US
dc.contributor.mitauthorJin, Donghyunen_US
dc.contributor.mitauthorLim, Seungbumen_US
dc.contributor.mitauthorLu, Binen_US
dc.contributor.mitauthorPiedra, Danielen_US
dc.contributor.mitauthorSun, Minen_US
dc.contributor.mitauthordel Alamo, Jesus A.en_US
dc.contributor.mitauthorDesGroseilliers, Garyen_US
dc.contributor.mitauthorLang, Jeffrey H.en_US
dc.contributor.mitauthorOtten, David M.en_US
dc.contributor.mitauthorPalacios, Tomasen_US
dc.contributor.mitauthorPerreault, David J.en_US
dc.relation.journalIEEE Transactions on Power Electronicsen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsAraghchini, Mohammad; Chen, Jun; Doan-Nguyen, Vicky; Harburg, Daniel V.; Jin, Donghyun; Kim, Jungkwun; Kim, Min Soo; Lim, Seungbum; Lu, Bin; Piedra, Daniel; Qiu, Jizheng; Ranson, John; Sun, Min; Yu, Xuehong; Yun, Hongseok; Allen, Mark G.; Alamo, Jesus A.; DesGroseilliers, Gary; Herrault, Florian; Lang, Jeffrey H.; Levey, Christopher G.; Murray, Christopher B.; Otten, David; Palacios, Tomas; Perreault, David J.; Sullivan, Charles R.en_US
dc.identifier.orcidhttps://orcid.org/0000-0003-4858-8264
dc.identifier.orcidhttps://orcid.org/0000-0002-5765-4369
dc.identifier.orcidhttps://orcid.org/0000-0002-0746-6191
dc.identifier.orcidhttps://orcid.org/0000-0002-8104-9097
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
dc.identifier.orcidhttps://orcid.org/0000-0003-3986-209X
dc.identifier.orcidhttps://orcid.org/0000-0002-6589-9948
dc.identifier.orcidhttps://orcid.org/0000-0003-0313-8243
dc.identifier.orcidhttps://orcid.org/0000-0003-2208-0665
dc.identifier.orcidhttps://orcid.org/0000-0001-7022-4817
mit.licenseOPEN_ACCESS_POLICYen_US


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