A Technology Overview of the PowerChip Development Program
Name
Araghchini Technology Overview.pdf
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2.15 MB
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Author(s)
Araghchini, Mohammad
Chen, Jun
Doan-Nguyen, Vicky
Harburg, Daniel V.
Jin, Donghyun
Kim, Jungkwun
Kim, Min Soo
Lim, Seungbum
Lu, Bin
Piedra, Daniel
Date Issued
September 2013
Journal
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Araghchini, Mohammad, Jun Chen, Vicky Doan-Nguyen, Daniel V. Harburg, Donghyun Jin, Jungkwun Kim, Min Soo Kim, et al. “A Technology Overview of the PowerChip Development Program.” IEEE Trans. Power Electron. 28, no. 9 (n.d.): 4182–4201.
Version
Author's final manuscript
Abstract
The PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages (e.g., up to 200V) and low-to-moderate power levels (e.g., up to 50W) and demonstrating the technologies in a high-efficiency light-emitting diode driver, as an example application. This paper presents an overview of the program and of the progress toward meeting the program goals. Key program aspects and progress in advanced nitride power devices and device reliability, integrated high-frequency magnetics and magnetic materials, and high-frequency converter architectures are summarized.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/TPEL.2013.2237791
