dc.contributor.advisor | Dimitri A. Antoniadis. | en_US |
dc.contributor.author | Tanasa, Corina E. (Corina Elena), 1976- | en_US |
dc.contributor.other | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. | en_US |
dc.date.accessioned | 2014-06-13T22:24:16Z | |
dc.date.available | 2014-06-13T22:24:16Z | |
dc.date.copyright | 2002 | en_US |
dc.date.issued | 2002 | en_US |
dc.identifier.uri | http://hdl.handle.net/1721.1/87845 | |
dc.description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002. | en_US |
dc.description | Includes bibliographical references (leaves 100-103). | en_US |
dc.description.statementofresponsibility | by Corina E. Tanasa. | en_US |
dc.format.extent | 117 leaves | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Massachusetts Institute of Technology | en_US |
dc.rights | M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. | en_US |
dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | en_US |
dc.subject | Electrical Engineering and Computer Science. | en_US |
dc.title | Hole mobility and effective mass in SiGe heterostructure-based PMOS devices | en_US |
dc.title.alternative | Silicon Germanium hole mobility and effective mass | en_US |
dc.type | Thesis | en_US |
dc.description.degree | S.M. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | |
dc.identifier.oclc | 51979176 | en_US |