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dc.contributor.advisorDimitri A. Antoniadis.en_US
dc.contributor.authorTanasa, Corina E. (Corina Elena), 1976-en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2014-06-13T22:24:16Z
dc.date.available2014-06-13T22:24:16Z
dc.date.copyright2002en_US
dc.date.issued2002en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/87845
dc.descriptionThesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002.en_US
dc.descriptionIncludes bibliographical references (leaves 100-103).en_US
dc.description.statementofresponsibilityby Corina E. Tanasa.en_US
dc.format.extent117 leavesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleHole mobility and effective mass in SiGe heterostructure-based PMOS devicesen_US
dc.title.alternativeSilicon Germanium hole mobility and effective massen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc51979176en_US


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