Investigation of mechanisms and influencing processing factors on mobility enhancement in strained Si n-MOSFETs
Author(s)
Xia, Guangrui, 1976-![Thumbnail](/bitstream/handle/1721.1/87898/54863743-MIT.pdf.jpg?sequence=5&isAllowed=y)
DownloadFull printable version (6.938Mb)
Other Contributors
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Advisor
Judy L. Hoyt.
Terms of use
Metadata
Show full item recordDescription
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003. Includes bibliographical references (p. 92-95).
Date issued
2003Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer SciencePublisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.