Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
Author(s)Baugher, Britton W. H.; Yang, Yafang; Jarillo-Herrero, Pablo; Churchill, Hugh Olen Hill
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The p–n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p–n junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Ambipolar semiconductors, such as carbon nanotubes, nanowires and organic molecules, allow for p–n junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here, we report ambipolar monolayer WSe[subscript 2] devices in which two local gates are used to define a p–n junction within the WSe[subscript 2] sheet. With these electrically tunable p–n junctions, we demonstrate both p–n and n–p diodes with ideality factors better than 2. Under optical excitation, the diodes demonstrate a photodetection responsivity of 210 mA W[superscript –1] and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising values for a nearly transparent monolayer material in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe[subscript 2]. These devices provide a building block for ultrathin, flexible and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials.
DepartmentMassachusetts Institute of Technology. Department of Physics
Nature Publishing Group
Baugher, Britton W. H., Hugh O. H. Churchill, Yafang Yang, and Pablo Jarillo-Herrero. “Optoelectronic Devices Based on Electrically Tunable P–n Diodes in a Monolayer Dichalcogenide.” Nature Nanotechnology 9, no. 4 (March 9, 2014): 262–267.