Vertically integrated transistors for field emission applications

Abstract

Field emission devices have demonstrated several research and commercial applications in the areas of flat panel displays, microwave power devices, imaging sensors and electron sources. Recent work has shown the feasibility of using integrated MOSFETs to control and enhance field emission stability and operating characteristics. This research effort investigates the integration of vertical MOS transistors with field emitter arrays as a means to enhance field emission device capabilities and range of applications. Vertical MOSFET device modeling was performed using MEDICI, a commercially available electrostatic simulator. In addition, process modeling was conducted using SUPREM to optimize design and layout sequencing for device fabrication. Working devices were fabricated and tested in the Integrated Circuits Laboratory within the Microsystems and Technology Laboratory at MIT. Techniques to achieve high-density field emitter arrays necessary for integrated VMOS / FEA devices were also investigated. This study determined that it is feasible to integrate and control field emitter arrays with vertical MOSFET devices.