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dc.contributor.advisorAnthony Marques and James E. Chung.en_US
dc.contributor.authorChadwick, Thomas B. (Thomas Burhoe)en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2005-08-24T19:40:29Z
dc.date.available2005-08-24T19:40:29Z
dc.date.copyright1994en_US
dc.date.issued1994en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/9096
dc.descriptionThesis (S.B. and S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.en_US
dc.descriptionIncludes bibliographical references (p. 99).en_US
dc.description.abstractFor the past three years, a project group at the Charles Stark Draper Laboratory has been developing a nonvolatile memory that uses novel ferroelectric technology. The advancements made could prove to give ferroelectrics a new lease on life as a memory technology by overcoming some of the inherent limitations that have hampered their use in the past. The primary advancement of the project has been the development of a nondestructive readout (NDRO) technique which exploits the hysteresis exhibited by the small-signal capacitance of ferroelectrics. This has led to the development of an NDRO sense amplifier which has evolved from circuit board prototypes to a fully custom CMOS part. A multichip module (MCM) was employed to integrate the CMOS technology with a ferroelectric technology. This thesis develops several models for the behavior of ferroelectrics, examines how ferroelectric memory compares to the more mainstream silicon-based memory technologies, and chronicles the project from the inception of the NDRO sensing technique through the production of the various experimental parts.en_US
dc.description.statementofresponsibilityby Thomas B. Chadwick, Jr.en_US
dc.format.extent99 p.en_US
dc.format.extent6319540 bytes
dc.format.extent6319296 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleThe development of a nonvolatile ferroelectric memory with nondestructive readouten_US
dc.title.alternativeNonvolatile ferroelectric memory with nondestructive readouten_US
dc.typeThesisen_US
dc.description.degreeS.B.and S.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc46988324en_US


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