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dc.contributor.advisorClifton G. Fonstad, Jr.en_US
dc.contributor.authorAhadian, Joseph F. (Joseph Farzin)en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2005-08-22T22:53:52Z
dc.date.available2005-08-22T22:53:52Z
dc.date.copyright2000en_US
dc.date.issued2000en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/9120
dc.descriptionThesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.en_US
dc.descriptionIncludes bibliographical references (p. 507-527).en_US
dc.description.abstractOptical interconnects have been proposed for use in high-speed digital systems as a means of overcoming the performance limitations of electrical interconnects at length scales ranging from one millimeter to one hundred meters. To achieve this goal, an optoelectronic very large scale integration (OE-VLSI) technology is needed which closely couples large numbers of optoelectronic devices, such as light emitters and photodetectors, with complex electronics. This thesis has been concerned with the development of an optoelectronic integration technology known as Epitaxy-on-Electronics (EoE). EoE produces monolithic optoelectronic integrated circuits (OEICs) by combining conventional epitaxial growth and fabrication techniques with commercial GaAs VLSI electronics. Proceeding from previous feasibility demonstrations, the growth and fabrication practices underlying the EoE integration process have been extensively revised and extended. The effectiveness of the resulting process has been demonstrated by fabricating the first monolithic, VLSI-complexity OEICs featuring light-emitting diodes (LEDs). As part of a research foundry project, components of this type were designed and tested by a number of groups involved in optical interconnect system development. To further realize the potential of the EoE technology, and to make its capabilities accessible to a broader user community, the focus of this work was extended beyond the development of the integration process to encompass a study of high-speed photodetectors implemented in the GaAs VLSI process, to examine the role of the EoE technology within optical interconnect applications, to formulate an analytical framework for the design of digital optical interconnects, and to implement compact, low power laser driver and optical receiver circuitry needed to implement these interconnects.en_US
dc.description.statementofresponsibilityby Joseph F. Ahadian.en_US
dc.format.extent527 p.en_US
dc.format.extent64729322 bytes
dc.format.extent64729078 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleDevelopment of a monolithic very large scale optoelectronic integrated circuit technologyen_US
dc.title.alternativeDevelopment of a monolithic very large scale OEIC technologyen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.identifier.oclc45162584en_US


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