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dc.contributor.advisorTonio Buonassisi.en_US
dc.contributor.authorYoussef, Amandaen_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Mechanical Engineering.en_US
dc.date.accessioned2014-12-08T18:49:44Z
dc.date.available2014-12-08T18:49:44Z
dc.date.copyright2014en_US
dc.date.issued2014en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/92112
dc.descriptionThesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2014.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 81-86).en_US
dc.description.abstractPorosity is postulated to be one of the reasons for the low efficiency of tin sulfide-based devices. This work is a preliminary investigation of the effects of two film growth parameters deposition rate and substrate temperature - on porosity. We employ the focused ion beam tomography technique to characterize and quantify porosity in tin sulfide thin films. We then generate 3D reconstructions of pores inside milled volumes from the films and quantify pore volumes. To explain the results, we employ nucleation theory and develop two different models: (a) a thermodynamic model that assumes pores form primarily from an effect known as "self-shadowing," whereby growth-rate anisotropy results in some grains that grow faster than their neighbors, and (b) a kinetic model that assumes a diffusion-driven process of void formation. We show that both models qualitatively support the experimental results, providing insight into process-structure relations that may improve film quality during growth.en_US
dc.description.statementofresponsibilityby Amanda Youssef.en_US
dc.format.extentpagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMechanical Engineering.en_US
dc.titleThree-dimensional defect characterization : focused ion beam tomography applied to tin sulfide thin filmsen_US
dc.title.alternative3-dimensional defect characterization : focused ion beam tomography applied to tin sulfide thin filmsen_US
dc.title.alternative3D defect characterization : focused ion beam tomography applied to tin sulfide thin filmsen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineering
dc.identifier.oclc895868016en_US


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