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dc.contributor.advisorLeonid S. Levitov.en_US
dc.contributor.authorSamutpraphoot, Polnopen_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Physics.en_US
dc.date.accessioned2015-01-05T20:06:24Z
dc.date.available2015-01-05T20:06:24Z
dc.date.copyright2014en_US
dc.date.issued2014en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/92691
dc.descriptionThesis: S.B., Massachusetts Institute of Technology, Department of Physics, 2014.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 39-40).en_US
dc.description.abstractDirac particles can exhibit Hall-like transport induced by Berry's gauge field in the absence of magnetic field. We develop a detailed picture of this unusual effect for charge carriers in graphene nanostructures. The Hall effect is nonzero in each valley but is of opposite signs in different valleys, giving rise to charge-neutral valley currents. Our analysis reveals that p-n junctions in graphene support persistent valley currents that remain nonzero in the system ground state (in thermodynamic equilibrium). The valley currents can be controlled via the bias and gate voltages, enabling a variety of potentially useful valley transport phenomena.en_US
dc.description.statementofresponsibilityby Polnop Samutpraphoot.en_US
dc.format.extent40 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectPhysics.en_US
dc.titleAnomalous Hall effect and persistent valley currents in graphene p-n junctions/en_US
dc.typeThesisen_US
dc.description.degreeS.B.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physics
dc.identifier.oclc898329165en_US


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