High-speed modulation of resonant CMOS photonic modulators in deep-submicron CMOS
Author(s)Moss, Benjamin (Benjamin Roy)
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
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Processor manufacturers have turned to parallelism to continue to improve processor performance, and the bandwidth demands of manycore systems are rising. Silicon photonics can lower the energy-per-bit of core-to-core and core-to-memory interconnects while simultaneously alleviating bandwidth bottlenecks. In this work, methods of controlling the amount of charge entering the diode structure of a photonic modulator are investigated to achieve high energy efficiency in a constrained monolithic process. Two digital modulator topologies are simulated, fabricated and tested. One circuit topology, intended to drive a carrier-injection-based ring modulator, uses a digital push-pull topology with preemphasis to reduce the energy-per-bit and to prevent the ring's optical passband from shifting to the next optical channel. The second circuit topology drives a depletion-mode modulator device for high energy efficiency and speed. High-level system modeling is addressed, as well as practical considerations such as packaging. This work marks the first monolithic transceiver in a zero-change CMOS process, and the most energy-efficient monolithically-integrated modulator in a sub-100 nm CMOS process.
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.Cataloged from PDF version of thesis.Includes bibliographical references (pages 161-164).
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology
Electrical Engineering and Computer Science.