X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth
| dc.contributor.author | Wenzel, K.W. | en_US |
| dc.contributor.author | Petrasso, R.D. | en_US |
| dc.date.accessioned | 2015-02-19T19:29:23Z | |
| dc.date.available | 2015-02-19T19:29:23Z | |
| dc.date.issued | 1988-01-01 | en_US |
| dc.identifier | 88ja003 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/94978 | |
| dc.publisher | MIT Plasma Science and Fusion Center | en_US |
| dc.title | X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth | en_US |
