Show simple item record

dc.contributor.authorIdeue, T.
dc.contributor.authorMurakawa, H.
dc.contributor.authorKaneko, Y.
dc.contributor.authorTokura, Y.
dc.contributor.authorYe, Linda
dc.contributor.authorCheckelsky, Joseph George
dc.date.accessioned2015-09-24T16:46:53Z
dc.date.available2015-09-24T16:46:53Z
dc.date.issued2015-09
dc.date.submitted2015-06
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/98895
dc.description.abstractWe have investigated thermoelectric properties of a three-dimensional Rashba system BiTeI. Magnetic-field dependences of the Seebeck effect and Nernst effect show qualitative changes with the Fermi level passing through the bulk Dirac point, indicating that thermoelectric effects can be a good experimental probe for the Fermi surface topology. The quantum oscillations are observed in the thermoelectric effect of BiTeI under a magnetic field, which are also dependent on the Fermi-level positions and consistent with the energy derivative of the three-dimensional density of states in the Rashba system.en_US
dc.description.sponsorshipJapan. Ministry of Education, Culture, Sports, Science and Technology (Grant-in-Aid for Scientific Research 24224009)en_US
dc.description.sponsorshipJapan. Council for Science and Technology Policy (Funding Program for World-Leading Innovative R&D on Science and Technology)en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.92.115144en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleThermoelectric probe for Fermi surface topology in the three-dimensional Rashba semiconductor BiTeIen_US
dc.typeArticleen_US
dc.identifier.citationIdeue, T., et al. "Thermoelectric probe for Fermi surface topology in the three-dimensional Rashba semiconductor BiTeI." Phys. Rev. B 92, 115144 (September 2015). © 2015 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorYe, Lindaen_US
dc.contributor.mitauthorCheckelsky, Joseph Georgeen_US
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2015-09-23T22:00:12Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsIdeue, T.; Ye, L.; Checkelsky, J. G.; Murakawa, H.; Kaneko, Y.; Tokura, Y.en_US
dc.identifier.orcidhttps://orcid.org/0000-0001-7949-1356
dc.identifier.orcidhttps://orcid.org/0000-0003-0325-5204
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record