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dc.contributor.advisorRaymond C. Ashoori and Henry I. Smith.en_US
dc.contributor.authorBerman, David, 1968-en_US
dc.date.accessioned2005-08-19T14:29:35Z
dc.date.available2005-08-19T14:29:35Z
dc.date.copyright1998en_US
dc.date.issued1998en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/9952
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.en_US
dc.descriptionIncludes bibliographical references (leaves 129-137).en_US
dc.description.statementofresponsibilityby David Berman.en_US
dc.format.extent137 leavesen_US
dc.format.extent7296668 bytes
dc.format.extent7296426 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Scienceen_US
dc.titleThe aluminum single-electron transistor for ultrasensitive electrometry of semiconductor quantum-confined systemsen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc40335700en_US


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