<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-18T21:12:11Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/100666" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/100666</identifier><datestamp>2026-06-06T00:56:00Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131023</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Jing Kong.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Logan, Alan D., M. Eng. Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2016-01-04T20:51:33Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2016-01-04T20:51:33Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2014</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2014</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/100666</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">932126354</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Cataloged from PDF version of thesis.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (pages 24-25).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">A planar process to roll lithographically defined sheets of chemical-vapor-deposition-grown graphene into carbon nanoscrolls by solvent evaporation is attempted. Graphene is observed to roll up by 350 nm on average from unrestrained edges, forming partial nanoscrolls. Resistance is measured while regulating charge carrier concentration with Si0 2 back gate. A large hysteresis is observed between increasing and decreasing backgate voltage sweeps, with a factor of two or greater difference in resistance that persists after backgate voltage returns to 0 V. The hysteresis is more pronounced and consistent in devices with a higher proportion of nanoscroll to flat graphene.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Alan D. Logan.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">M.Eng.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">75 pages</dim:field>
   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri" lang="en_US">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Fabrication of carbon nanoscrolls from patterned CVD-grown graphene</dim:field>
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   	&lt;Title>Fabrication of carbon nanoscrolls from patterned CVD-grown graphene&lt;/Title>
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   	&lt;PublicationDate>2014&lt;/PublicationDate>
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        	&lt;DisplayName>Logan, Alan D., M. Eng. Massachusetts Institute of Technology&lt;/DisplayName>
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    &lt;Keyword>Electrical Engineering and Computer Science.&lt;/Keyword>
   	&lt;Abstract>A planar process to roll lithographically defined sheets of chemical-vapor-deposition-grown graphene into carbon nanoscrolls by solvent evaporation is attempted. Graphene is observed to roll up by 350 nm on average from unrestrained edges, forming partial nanoscrolls. Resistance is measured while regulating charge carrier concentration with Si0 2 back gate. A large hysteresis is observed between increasing and decreasing backgate voltage sweeps, with a factor of two or greater difference in resistance that persists after backgate voltage returns to 0 V. The hysteresis is more pronounced and consistent in devices with a higher proportion of nanoscroll to flat graphene.&lt;/Abstract>
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