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Tonio Buonassisi. Polizzotti, Alex J Massachusetts Institute of Technology. Department of Mechanical Engineering. Massachusetts Institute of Technology. Department of Mechanical Engineering 2016-07-01T18:45:30Z 2016-07-01T18:45:30Z 2016 2016 http://hdl.handle.net/1721.1/103495 952421832 Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2016. Cataloged from PDF version of thesis. Includes bibliographical references (pages 81-85). Tin sulfide (SnS), a potential p-type absorber material for photovoltaic applications, is hampered by poor carrier-transport properties, particularly minority-carrier lifetime. This study investigates the role of intrinsic and extrinsic crystallographic point defects on the electronic transport properties of SnS. High-purity SnS is grown via sulfurization of tin films, and compared with baseline material made from feedstock with two orders of magnitude higher impurity content. Minority-carrier lifetime, morphology, and impurity content are analyzed in both materials. It is shown that improving feedstock purity by two orders of magnitude results in an improvement to minority-carrier lifetime from under 100 ps to over 2 ns. Simulations suggest that this increase in minority-carrier lifetime could lead to device efficiency improvements. by Alex J. Polizzotti. S.M. 85 pages eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Mechanical Engineering. Purity matters : enhancing carrier transport properties in tin sulfide for photovoltaic applications by reducing impurity content Enhancing carrier transport properties in tin sulfide for photovoltaic applications by reducing impurity content. Thesis application/pdf false Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="870585c1-155e-4395-9634-f860e8352b00"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Purity matters : enhancing carrier transport properties in tin sulfide for photovoltaic applications by reducing impurity content</Title> <Subtitle>Enhancing carrier transport properties in tin sulfide for photovoltaic applications by reducing impurity content.</Subtitle> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2016</PublicationDate> <Authors> <Author> <DisplayName>Polizzotti, Alex J</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Mechanical Engineering.</Keyword> <Abstract>Tin sulfide (SnS), a potential p-type absorber material for photovoltaic applications, is hampered by poor carrier-transport properties, particularly minority-carrier lifetime. This study investigates the role of intrinsic and extrinsic crystallographic point defects on the electronic transport properties of SnS. High-purity SnS is grown via sulfurization of tin films, and compared with baseline material made from feedstock with two orders of magnitude higher impurity content. Minority-carrier lifetime, morphology, and impurity content are analyzed in both materials. It is shown that improving feedstock purity by two orders of magnitude results in an improvement to minority-carrier lifetime from under 100 ps to over 2 ns. Simulations suggest that this increase in minority-carrier lifetime could lead to device efficiency improvements.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>