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Jing Kong. Fang, Wenjing, Ph. D. Massachusetts Institute of Technology Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2016-07-18T20:04:16Z 2016-07-18T20:04:16Z 2016 2016 http://hdl.handle.net/1721.1/103724 953416424 Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016. Cataloged from PDF version of thesis. Includes bibliographical references (pages 156-165). The aim of this thesis is two-fold: the first is to develop a reliable method for synthesizing bilayer graphene using chemical vapor deposition (CVD) method and to understand the growth mechanism. The second part involves exploring methods of synthesizing hexagonal boron nitride (hBN). The successful isolation of monolayer graphene in 2004 has attracted many researchers to search for potential applications of graphene and other two-dimensional materials in electronic and optical devices. However, the Scotch-tape method sets contraints for such applications due to the limited size and randomized location of obtained flakes. Thus, synthesizing large-area, high-quality two dimensional materials is highly desirable. This thesis seeks to develop a method to produce both bilayers and hBN with large area by CVD method and to investigate the underlying growth mechanisms for better control over the thickness, uniformity and stacking orientation. by Wenjing Fang. Ph.D. 165 pages eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Electrical Engineering and Computer Science. Synthesis of bilayer graphene and hexagonal boron nitride by chemical vapor deposition method Thesis application/pdf false Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="1fba0a72-3058-4b49-83a9-cbcaa70b7aed"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Synthesis of bilayer graphene and hexagonal boron nitride by chemical vapor deposition method</Title> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2016</PublicationDate> <Authors> <Author> <DisplayName>Fang, Wenjing, Ph. D. Massachusetts Institute of Technology</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Electrical Engineering and Computer Science.</Keyword> <Abstract>The aim of this thesis is two-fold: the first is to develop a reliable method for synthesizing bilayer graphene using chemical vapor deposition (CVD) method and to understand the growth mechanism. The second part involves exploring methods of synthesizing hexagonal boron nitride (hBN). The successful isolation of monolayer graphene in 2004 has attracted many researchers to search for potential applications of graphene and other two-dimensional materials in electronic and optical devices. However, the Scotch-tape method sets contraints for such applications due to the limited size and randomized location of obtained flakes. Thus, synthesizing large-area, high-quality two dimensional materials is highly desirable. This thesis seeks to develop a method to produce both bilayers and hBN with large area by CVD method and to investigate the underlying growth mechanisms for better control over the thickness, uniformity and stacking orientation.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>