<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-20T01:36:07Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/108845" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/108845</identifier><datestamp>2026-06-16T18:15:38Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131022</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Michael R. Watts.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Su, Zhan, Ph. D. Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2017-05-11T19:06:35Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2017-05-11T19:06:35Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2016</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2017</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/108845</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">986521758</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis: Ph. D. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, February 2017.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">This electronic version was submitted by the student author.  The certified thesis is available in the Institute Archives and Special Collections.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Cataloged from student-submitted PDF version of thesis.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (pages 155-167).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">The theoretical background of microcavities for photonic applications has been extensively investigated in theory over the past two decades. These structures provide the ability to filter wavelength, support high-Q modes and enhance intensity within the cavities while maintaining a small device footprint. Such characteristics make these structures good candidates to optimize performance and shrink the size of devices for both linear and nonlinear optics. Recent advancements in silicon-based fabrication technology provide access to dopants for active control, material layers such as germanium and silicon nitride, and 3D-integration technologies that were previously exclusive to electronics development, leading to tremendous progress in cavity-based integrated photonic circuits. Using the silicon photonic platform developed by our group, high-performance microcavity-based structures have been demonstrated for optical signal routing, detection, and lasing applications. We first introduce partial-drop filters and present results using them to achieve a highly uniform wavelength-division-multiplexing (WDM) compatible optical multicast system. We then implement a waveguide-coupled resonant detector using a germanium layer grown on top of the silicon. In addition to having low dark current and high-speed performance, the resonant detector extends the wavelength detection range beyond 1620nm while maintaining a device radius only 4.5[mu]m. Furthermore, an easy-to-fabricate waveguide-coupled trench-based Al2O3 microcavity is presented that achieves a Q-factor on the order of 106 with a bend radius on the scale of 100[mu]m. Compact on-chip rare-earth-ion (ytterbium, erbium, thulium) doped Al2O3 lasers were then demonstrated with a sub-milliwatt lasing threshold, making trench-based cavities a suitable platform to achieve optically pumped on-chip lasers.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Zhan Su.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">Ph.D. in Electrical Engineering</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">167 pages</dim:field>
   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri" lang="en_US">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Advanced silicon photonic microcavities for routing, detection and lasing applications</dim:field>
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   	&lt;Title>Advanced silicon photonic microcavities for routing, detection and lasing applications&lt;/Title>
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   	&lt;PublicationDate>2017&lt;/PublicationDate>
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        	&lt;DisplayName>Su, Zhan, Ph. D. Massachusetts Institute of Technology&lt;/DisplayName>
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    &lt;Keyword>Electrical Engineering and Computer Science.&lt;/Keyword>
   	&lt;Abstract>The theoretical background of microcavities for photonic applications has been extensively investigated in theory over the past two decades. These structures provide the ability to filter wavelength, support high-Q modes and enhance intensity within the cavities while maintaining a small device footprint. Such characteristics make these structures good candidates to optimize performance and shrink the size of devices for both linear and nonlinear optics. Recent advancements in silicon-based fabrication technology provide access to dopants for active control, material layers such as germanium and silicon nitride, and 3D-integration technologies that were previously exclusive to electronics development, leading to tremendous progress in cavity-based integrated photonic circuits. Using the silicon photonic platform developed by our group, high-performance microcavity-based structures have been demonstrated for optical signal routing, detection, and lasing applications. We first introduce partial-drop filters and present results using them to achieve a highly uniform wavelength-division-multiplexing (WDM) compatible optical multicast system. We then implement a waveguide-coupled resonant detector using a germanium layer grown on top of the silicon. In addition to having low dark current and high-speed performance, the resonant detector extends the wavelength detection range beyond 1620nm while maintaining a device radius only 4.5[mu]m. Furthermore, an easy-to-fabricate waveguide-coupled trench-based Al2O3 microcavity is presented that achieves a Q-factor on the order of 106 with a bend radius on the scale of 100[mu]m. Compact on-chip rare-earth-ion (ytterbium, erbium, thulium) doped Al2O3 lasers were then demonstrated with a sub-milliwatt lasing threshold, making trench-based cavities a suitable platform to achieve optically pumped on-chip lasers.&lt;/Abstract>
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